竹懋科技除了供應全系列二極體產品,也專注於研發Low VF 和High Voltage 等二極體元件製程技術,目前已開發出一系列 Low VF Schottky Didoes和300V High Voltage Low VF Schottky Diodes 產品, 應用於新一代QC Charger、48V充電式電動工具機、電動機踏車等相關市場領域,相關元件製程技術已取得台灣、中國、美國等地多項專利,近年來並成功切入功率半導體元件,提供Transistor 和MOSFET等產品。
NO. | Location | Patent |
---|---|---|
I226709 | R.O.C | Schottky diode structure and its production method |
I234289 | R.O.C | Schottky diode with high breakdown voltage and low reverse leakage current |
I237901 | R.O.C | Schottky diode and its production method |
I263344 | R.O.C | Schottky barrier diode and its production method |
362744 | CN | Power Schottky rectifier device and its production method |
312861 | CN | Schottky diode with high breakdown voltage and low reverse leakage current |
449005 | CN | Schottky diode structure and its production method |
6,936,905 | USA | Two mask schottky diode with locos structure |
6,998,694 | USA | High switching speed two mask Schottky diode with high field breakdown |
6,825,073 | USA | Schottky diode with high field breakdown and low reverse leakage current |
7,064,408 | USA | Schottky barrier diode and method of making the same-Trench |
7,078,780 | USA | Schottky barrier diode and method of making the same |
7.368.371 | USA | Silicon carbide Schottky diode and method of making the same |
7.491.633 | USA | High switching speed two mask schottky diode with high field breakdown |
11/453,799 | USA | Method of forming low forward voltage Schottky barrier diode with LOCOS structure therein |