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專利與認證


竹懋科技除了供應全系列二極體產品,也專注於研發Low VF 和High Voltage 等二極體元件製程技術,目前已開發出一系列 Low VF Schottky Didoes和300V High Voltage Low VF Schottky Diodes 產品, 應用於新一代QC Charger、48V充電式電動工具機、電動機踏車等相關市場領域,相關元件製程技術已取得台灣、中國、美國等地多項專利,近年來並成功切入功率半導體元件,提供Transistor 和MOSFET等產品。


        


NO. Location Patent
I226709 R.O.C Schottky diode structure and its production method
I234289 R.O.C Schottky diode with high breakdown voltage and low reverse leakage current
I237901 R.O.C Schottky diode and its production method
I263344 R.O.C Schottky barrier diode and its production method
362744 CN Power Schottky rectifier device and its production method
312861 CN Schottky diode with high breakdown voltage and low reverse leakage current
449005 CN Schottky diode structure and its production method
6,936,905 USA Two mask schottky diode with locos structure
6,998,694 USA High switching speed two mask Schottky diode with high field breakdown
6,825,073 USA Schottky diode with high field breakdown and low reverse leakage current
7,064,408 USA Schottky barrier diode and method of making the same-Trench
7,078,780 USA Schottky barrier diode and method of making the same
7.368.371 USA Silicon carbide Schottky diode and method of making the same
7.491.633 USA High switching speed two mask schottky diode with high field breakdown
11/453,799 USA Method of forming low forward voltage Schottky barrier diode with LOCOS structure therein