(1) The most advanced Photo Glass process technology technically improves the high temperature and high pressure resistance of the wafer.
(2) Three layers of passivation protection of glass, Sipos (semi-insulating polycrystalline silicon), and LTO (low temperature oxide film), which significantly improve the chip's high temperature resistance and package yield.
(3) The low-impedance diffusion technology greatly improves the ability of the chip to resist reverse surge impact, which fully reduces the failure rate of the device, thereby improving the reliability of the component.
Since the high-frequency characteristics of GanFET fast charging will cause EMI problems, GanFET fast charging requires the use of more or larger EMI suppressors.
The Low Noise Bridge Rectifier has soft recovery characteristics, which can greatly reduce the occurrence of harmonic oscillation in GanFET fast charging, so that GanFET fast charging can reduce the number or use of EMI suppression devices such as X capacitors, common mode inductors, differential mode inductors, etc. Specifications, reducing the overall size of the fast charge.
