The Schottky Diode trench structure design can be reduced the surface electric field and the Schottky barrier of the Schottky diode.
Therefore, the Trench structure can use a Schottky metal with a low work function to reduce the on-voltage without endurance high reverse leakage current.
The Trench structure can reduce the minority carriers injected into the drift region, there by minimizing the amount of stored charges and increasing the switching speed.
Compared with Schottky diodes, the low-current start-up performs better, can provide better energy efficiency conversion, and meets the six-level energy efficiency requirements.

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1. No Schottky contact, with lower VF than Schottky diodes.
2. Faster reaction time, faster switching speed than common diodes.
3. High reliability, can work at higher temperatures.
4. Higher Reverse Voltage than Schottky diode.

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The reverse anti-ESD ability of LED diodes is much weaker than that of forward ones. Zener diodes can provide an ESD bypass channel to protect LED diodes and prevent LED diodes from failing due to static electricity.

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Field Stop technology is adopted, which combines the advantages of through-type (PT) and non-through-type (NPT) IGBT structures. FS IGBT has lower saturation voltage drop VCE(sat) during turn-on and lower switching loss at turn-off instant. Due to the positive temperature characteristic of VCE(sat), IGBTs allow parallel use and are relatively simple to use.
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