(1) The most advanced Photo Glass process technology technically improves the high temperature and high pressure resistance of the wafer.

(2) Three layers of passivation protection of glass, Sipos (semi-insulating polycrystalline silicon), and LTO (low temperature oxide film), which significantly improve the chip's high temperature resistance and package yield.

(3) The low-impedance diffusion technology greatly improves the ability of the chip to resist reverse surge impact, which fully reduces the failure rate of the device, thereby improving the reliability of the component.