Patent and Certification CITC focuses on research and development Low VF and High Voltage diode process technologies and supply a full range of diode products. We have developed a series of Low VF Schottky Didoes and 300V High Voltage Low VF Schottky Diodes products used in QC Chargers, 48V power tools, electric bicycle and other high tech products, our component process technologies have obtained a number of patents in Taiwan the USA and China. In recent years, we have successfully developed power semiconductor components and started to provide transistor and MOSFET products.
| NO. | Location | Patent |
|---|---|---|
| I226709 | R.O.C | Schottky diode structure and its production method |
| I234289 | R.O.C | Schottky diode with high breakdown voltage and low reverse leakage current |
| I237901 | R.O.C | Schottky diode and its production method |
| I263344 | R.O.C | Schottky barrier diode and its production method |
| 362744 | CN | Power Schottky rectifier device and its production method |
| 312861 | CN | Schottky diode with high breakdown voltage and low reverse leakage current |
| 449005 | CN | Schottky diode structure and its production method |
| 6,936,905 | USA | Two mask schottky diode with locos structure |
| 6,998,694 | USA | High switching speed two mask Schottky diode with high field breakdown |
| 6,825,073 | USA | Schottky diode with high field breakdown and low reverse leakage current |
| 7,064,408 | USA | Schottky barrier diode and method of making the same-Trench |
| 7,078,780 | USA | Schottky barrier diode and method of making the same |
| 7.368.371 | USA | Silicon carbide Schottky diode and method of making the same |
| 7.491.633 | USA | High switching speed two mask schottky diode with high field breakdown |
| 11/453,799 | USA | Method of forming low forward voltage Schottky barrier diode with LOCOS structure therein |
