Features:
• Combined with split gate, Trench and Super Junction technology.
• Low Rdson and Low Qgd.
• Low-side Schottky diode process (Buck topology circuit application).
• Enhanced avalanche capability without sacrificing device durability.

Low Voltage MOSFET

•IDS=-61A~189A ; VDS= -60V~250V
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Transistors

•IC=-4A~0.5A ; CBO=-300V~300V
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